smdj series 5.0 to 170volts 3000watts smd transient voltage suppressors 3000 mi ni mum w we ight: 0.21 gr ams (approx.) case: smc/do-214ab molded plastic terminals:solderable per 200 a features maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified 1 of 5 characteris ti c symbol value unit p eak pulse power dissipation at t a = 25 c (note 1, 2, 5) figure 3 p ppm p eak forward surge current (note 3) i fsm p eak pulse current on 10/1000s waveform (note 1) figure 1 i ppm see t ab le 1 a s teady state power dissipation (note 2, 4) p m(a v ) 5.0 w operat i ng and storage temperature range t j , t stg -55 to +150 c note: 1. non-repetitive current pulse, per figure 1 and derated above t a = 25 c per figure 4. 2. mounted on 40mm 2 copper pad. 3. 8. 3ms single half sine-wave duty cycle = 4 pulses per minutes maximum. 4. lead temperature at 75c = t l . 5. p ea k pulse power waveform is 10/1000s. smdj series ! g lass passivated die construction ! 3000w peak pulse power dissipation ! ! uni- and bi-directional versions available ! excellent clamping capability ! fast response time ! plastic case material has ul flammability mechanic al d ata ! ! mil- st d- 202, method 208 ! polarity: cathode band or cathode notch ! marking: unidirectional ? device code and cathode band bidirectional ? device code only ! ! lead free: for rohs / lead free version z ibo seno electronic engineering co., ltd. www.senocn.com 5.0v-170v standoff voltage dim min max a 5.59 6.22 b 6.60 7.11 c 2.75 3.18 d 0.15 0.31 e 7.75 8.13 g 0.10 0.20 h 0.76 1.52 j 2.00 2.62 all dimensions in mm a b c d g h e j ?c? s u f f i x des i gnates bi-directional devices ?a? suffix designates 5% tolerance devices no suffix designates 10% tolerance devices smc/do-214ac a l l d a t a s h e e t
2 of 5 1 10 100 1000 10 100 1000 10,000 v , reverse st andoff voltage (v) fig .2 t y pical total capacitance rwm c , cap acitance (pf) t measured at zero bias uni-directional bi-directional t=2 5 c j f=1. 0m hz v = 50 mv p-p sig 0.1 1.0 0.1 10 100 1.0 10 1000 10000 t=25c j p , peak pulse power (kw) d 100 non repetitive pulse waveform s howninfig.4 012 3 100 50 0 i , peak pulse current (%i ) pp p peak v alue i pp half value i /2 pp 10 x 1000 waveform as defined by r.e.a. t p t, time (ms) fi g . 4 pulse waveform 10 x 1000 waveform as defined by rea 0 25 50 75 100 125 150 175 200 100 75 50 25 0 t , ambient temperature ( c) fig . 1 pulse derating curve a peak pulse dera ting in % of peak power or current 10 200 100 2 10 5 peak for w ard surge current, (a) number of cycles at 60hz fig . 5, maximum non-repetitive surg e current 20 50 100 1 pulse width 8.3ms single half-sine-wave (jedec method) 0.0 1.0 2.0 3.0 025 50 75 100 125 150 175 200 pm steady st a te power dissipation (w ) (av), t , lead temperature ( c) fig . 6 steady state power deratin g curve l 4.0 5.0 60hz resistive or inductive load z ibo seno electronic engineering co., ltd. www.senocn.com smdj series smdj series a l l d a t a s h e e t
uni/bi-directional 5.0 to 170volts 3000w smd transient voltage suppressors 3 of 5 notes: 1. suffix c denotes bi-directional device. 2. v br measured with i t current pulse = 300 s. 3. for bi-directional devices having v rwm of 10v and under, the i r is doubled. z ibo seno electronic engineering co., ltd. www.senocn.com smdj series smdj series smdj5.0 smdj5.0c hdd idd 5. 0 6.40 7.55 10 9.6 312.5 800.0 smdj5.0a smdj5.0ca hde ide 5.0 6.40 7.25 10 9.2 326.1 800.0 smdj6.0 smdj6.0c hdf idf 6. 0 6.67 8.45 10 11.4 263.2 800.0 smdj6.0a smdj6.0ca hdg idg 6.0 6.67 7.67 10 10.3 291.3 800.0 smdj6.5 smdj6.5c hdh idh 6. 5 7.22 9.14 10 12.3 243.9 500.0 smdj6.5a smdj6.5ca hdk idk 6.5 7.22 8.30 10 11.2 267.9 500.0 smdj7.0 smdj7.0c hdl idl 7.0 7.78 9.86 10 13.3 225.6 200.0 smdj7.0a smdj7.0ca hdm idm 7.0 7.78 8.95 10 12.0 250.0 200.0 smdj7.5 smdj7.5c hdn idn 7. 5 8.33 10.67 1.0 14.3 209.8 100.0 smdj7.5a smdj7.5ca hdp idp 7.5 8.33 9.58 1. 0 12.9 232.6 100.0 smdj8.0 smdj8.0c hdq idq 8. 0 8.89 11.3 1.0 15.0 200.0 50.0 smdj8.0a smdj8.0ca hdr idr 8. 0 8.89 10.23 1.0 13.6 220.6 50.0 smdj8.5 smdj8.5c hds ids 8. 5 9.44 11.92 1. 0 15.9 188.7 20.0 smdj8.5a smdj8.5ca hdt idt 8.5 9.44 10.82 1. 0 14.4 208.3 20.0 smdj9.0 smdj9.0c hdu idu 9. 0 10.0 12.6 1.0 16.9 177.5 10.0 smdj9.0a smdj9.0ca hdv idv 9. 0 10.0 11.5 1.0 15.4 194.8 10.0 SMDJ10 SMDJ10c hdw idw 10 11 .1 14.1 1.0 18.8 159.6 5.0 SMDJ10a SMDJ10ca hdx idx 10 11.1 12.8 1.0 17.0 176.5 5.0 smdj11 smdj11 c hdy idy 11 12.2 15.4 1.0 20.1 149.3 5.0 smdj11a smdj11 ca hdz idz 11 12.2 14.0 1.0 18.2 164.8 5.0 smdj12 smdj12c hed ied 12 13.3 16.9 1.0 22.0 136.4 5.0 smdj12a smdj12ca hee iee 12 13.3 15.3 1.0 19.9 150.8 5.0 smdj13 smdj13c hef ief 13 14.4 18.2 1.0 23.8 126.1 5.0 smdj13a smdj13ca heg ieg 13 14.4 16.5 1.0 21.5 139.5 5.0 type n u mber marking reverse stand-off voltage breakdown voltage min. @i t breakdow n v oltage max. @ i t test current maximum clamping v o ltage @i pp peak pulse current reve rs e leakage @v rmw (uni) (bi) (uni) (bi) v rmw (v) v br min (v) v br max (v) i t (ma) v c (v) i pp (a) i r (ua) a l l d a t a s h e e t
4 of 5 notes: 1. suffix c denotes bi-directional device. 2. v br measured with i t current pulse = 300 s. 3. for bi-directional devices having v rwm of 10v and under, the i r is doubled. z ibo seno electronic engineering co., ltd. www.senocn.com smdj14 smdj14c heh ieh 14 15. 6 19.8 1.0 25.8 116.3 5.0 smdj14a smdj14ca hek iek 14 15.6 17.9 1.0 23.2 129.3 5.0 smdj15 smdj15c hel iel 15 16. 7 21.1 1.0 26.9 111.5 5.0 smdj15a smdj15ca hem iem 15 16.7 19.2 1.0 24.4 123.0 5.0 smdj16 smdj16c hen ien 16 17.8 22.6 1.0 28.8 104.2 5.0 smdj16a smdj16ca hep iep 16 17.8 20.5 1.0 26. 0 115.4 5.0 smdj17 smdj17c heq ieq 17 18.9 23.9 1.0 30.5 98.4 5.0 smdj17a smdj17ca her ier 17 18.9 21.7 1.0 27.6 108.7 5.0 smdj18 smdj18c hes ies 18 20.0 25.3 1.0 32.2 93.2 5.0 smdj18a smdj18ca het iet 18 20.0 23.3 1.0 29.2 102.7 5.0 smdj20 smdj20c heu ieu 20 22.2 28.1 1.0 35.8 83.8 5.0 smdj20a smdj20ca hev iev 20 22.2 25.5 1.0 32.4 92.6 5.0 smdj22 smdj22c hew iew 22 24.4 30.9 1.0 39.4 76.1 5.0 smdj22a smdj22ca hex iex 22 24.4 28.0 1.0 35.5 84.5 5.0 smdj24 smdj24c hey iey 24 26.7 33.8 1.0 43.0 69.8 5.0 smdj24a smdj24ca hez iez 24 26.7 30.7 1.0 38.9 77.1 5.0 smdj26 smdj26c hfd ifd 26 28.9 36.6 1.0 46.6 64.4 5.0 smdj26a smdj26ca hfe ife 26 28.9 33.2 1.0 42.1 71.3 5.0 smdj28 smdj28c hff iff 28 31.1 39.4 1.0 50.0 60.0 5.0 smdj28a smdj28ca hfg if g 28 31.1 35.8 1.0 45.4 66.1 5.0 smdj30 smdj30c hfh ifh 30 33.3 42.2 1.0 53.5 56.1 5.0 smdj30a smdj30ca hfk ifk 30 33.3 38.3 1.0 48.4 62.0 5.0 smdj33 smdj33c hfl if l 33 36.7 46.5 1.0 59.0 50.8 5.0 smdj33a smdj33ca hf m ifm 33 36.7 42.2 1.0 53.3 56.3 5.0 smdj36 smdj36c hfn ifn 36 40.0 50.7 1.0 64.3 46.7 5.0 smdj36a smdj36ca hfp ifp 36 40.0 46.0 1.0 58.1 51.6 5.0 smdj40 smdj40c hfq if q 40 44.4 56.3 1.0 71.4 42.0 5.0 smdj40a smdj40ca hfr ifr 40 44.4 51.1 1.0 64.5 46.5 5.0 smdj43 smdj43c hfs if s 43 47.8 60.5 1.0 76.7 39.1 5.0 smdj43a smdj43ca hft ift 43 47.8 54.9 1.0 69.4 43.2 5.0 smdj45 smdj45c hfu ifu 45 50.0 63.3 1.0 80.3 37.4 5.0 smdj45a smdj45ca hfv ifv 45 50.0 57.5 1.0 72.7 41.3 5.0 smdj48 smdj48c hfw if w 48 53.3 67.5 1.0 85.5 35.1 5.0 smdj48a smdj48ca hf x ifx 48 53.3 61.3 1.0 77.4 38.8 5.0 smdj51 smdj51c hfy if y 51 56.7 71.8 1.0 91.1 32.9 5.0 smdj51a smdj51ca hfz ifz 51 56.7 65.2 1.0 82.4 36.4 5.0 uni/bi-directional 5.0 to 170volts 3000w smd transient voltage suppressors smdj series smdj series type n u mber marking reverse stand-off voltage breakdown voltage min. @i t breakdow n v oltage max. @ i t test current maximum clamping v o ltage @i pp peak pulse current reve rs e leakage @v rmw (uni) (bi) (uni) (bi) v rmw (v) v br min (v) v br max (v) i t (ma) v c (v) i pp (a) i r (ua) a l l d a t a s h e e t
5 of 5 notes: 1. suffix c denotes bi-directional device. 2. v br measured with i t current pulse = 300 s. 3. for bi-directional devices having v rwm of 10v and under, the i r is doubled. z ibo seno electronic engineering co., ltd. www.senocn.com ty p e n u mber marking reverse stand-off voltage breakdown voltage min. @i t breakdow n v oltage max. @ i t t est current maximum cla m ping v o ltage @i pp peak pulse current reve rs e leakage @v rmw (uni) (bi) (uni) (bi) v rmw (v) v br min (v) v br max (v) i t (m a ) v c (v) i pp (a ) i r (u a ) smdj54 smdj54c hgd igd 54 60.0 76.0 1.0 96.3 31.2 5.0 smdj54a smdj54ca hge ige 54 60.0 69.0 1.0 87.1 34.4 5.0 smdj58 smdj58c hgf igf 58 64.4 81.6 1.0 103 29.1 5.0 smdj58a smdj58ca hgg igg 58 64.4 74.1 1.0 93.6 32.1 5.0 smdj60 smdj60c hgh igh 60 66.7 84.5 1.0 107 28.0 5.0 smdj60a smdj60c a hgk igk 60 66.7 76.7 1.0 96.8 31.0 5.0 smdj64 smdj64c hgl igl 64 71.1 90.1 1.0 114 26.3 5.0 smdj64a smdj64ca hgm igm 64 71.1 81.8 1. 0 103 29.1 5.0 smdj70 smdj70c hgn ign 70 77.8 98.6 1.0 125 24.0 5.0 smdj70a smdj70ca hgp igp 70 77.8 89.5 1.0 113 26.5 5.0 smdj75 smdj75c hgq igq 75 83.0 105.7 1.0 134 22.4 5.0 smdj75a smdj75ca hgr igr 75 83.0 95.8 1. 0 121 24.8 5.0 smdj78 smdj78c hgs igs 78 86.0 109.8 1.0 139 21.6 5.0 smdj78a smdj78c a hgt igt 78 86.0 99.7 1. 0 126 23.8 5.0 smdj85 smdj85c hgu igu 85 94.0 1 19.2 1.0 151 19.9 5.0 smdj85a smdj85ca hgv igv 85 94.0 108.2 1. 0 137 21.9 5.0 smdj90 smdj90c hgw igw 90 100 126.5 1.0 160 18.8 5.0 smdj90a smdj90ca hgx igx 90 100 1 15.5 1.0 146 20.5 5.0 SMDJ10 0 SMDJ10 0c hgy igy 100 1 11 141.0 1.0 179 16.8 5.0 SMDJ100a SMDJ100ca hgz igz 100 111 128.0 1.0 162 18.5 5.0 smdj1 10 smdj11 0 c hhd ihd 110 122 154.5 1.0 196 15.3 5.0 smdj110a smdj110 c a hhe ih e 110 122 140.5 1.0 177 16.9 5.0 smdj120 smdj120c hhf ih f 120 133 169.0 1.0 214 14.0 5.0 smdj12 0a smdj12 0ca hhg ih g 120 133 153.0 1.0 193 15.5 5.0 smdj130 smdj130c hhh ihh 130 144 182.5 1.0 231 13.0 5.0 smdj130a smdj130ca hhk ih k 130 144 165.5 1.0 209 14.4 5.0 smdj15 0 smdj15 0c hhl ihl 150 167 211.5 1.0 268 11.2 5.0 smdj150a smdj150ca hhm ih m 150 167 192.5 1.0 243 12.3 5.0 smdj16 0 smdj16 0c hhn ihn 160 178 226.0 1.0 287 10.5 5.0 smdj160a smdj160ca hhp ih p 160 178 205.0 1.0 259 11.6 5.0 smdj170 smdj170c hhq ihq 170 189 239.5 1.0 304 9.9 5.0 smdj17 0a smdj17 0ca hhr i hr 170 189 217.5 1.0 275 10.9 5.0 uni/bi-directional 5.0 to 170volts 3000w smd transient voltage suppressors smdj series smdj series a l l d a t a s h e e t
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